분야
pptxTFT fabrication
Result
I-V data (Gate sweep)
Threshold Voltage
Subthreshold swing
On/Off ratio
Mobility
Conclusion
Summary
(Clear than Shadow Mask)
PHOTO LITHOGRAPHY
PROCEDURE:
1. Coat the PR
2. Expose to UV light
through the Mask
3. Immerse the plate
in the “Developer”
5. Coat metal
6. “Lift-off” in acetone
Pressure : 6.4 X 10-5 torr
Deposition : 1.2nm
Why we use E-beam Evaporator?
- Good growth rate and step coverage
- Good for high Melting point Material
Positive adhesion
But, EBE is possible x-ray damage
- High Pressure for Plasma
- Power for Frequency
- Gas concentration
- Deposition : 100nm
Why we use Sputter?
- Good for high Melting point Material
- Thickness uniformity
- Positive adhesion
- But, law growth rate and step coverage
Patterning : Photo Lithography
(Clear than Shadow Mask)
Why Al is used for electrode?
(Especially Gate)
- Law melting point
- Work function
- High-K, Good mobility
- Elimination of carrier mobility degradation
