소개글
[화학공학]Synthesis and electrical properties of ZnO nanowires(영문)에 대한 자료입니다.
목차
1 Definition of Nanowire
2Introduction
3 Experiment
4 Results and discussion
5 Conclusion
6 Acknowledgements and References
본문내용
단면의 지름이 1나노미터
(1나노는 10억분의 1미터)정도의 극 미세선
사용되는 분야 : 레이저나 트랜지스터,
메모리, 화학감지용 센서
사용되는 소재 : 반도체 실리콘
화학적으로 민감한 주석 산화물,
발광 반도체인 갈륨질화물
ZnO is a semiconductor material
A peculiarity of ZnO nanowire : many novel magnetic, electrical and optical properties
Various approaches of ZnO nanowire : vapor-phase method, rapid thermal evaporation, sputter deposition, template-assisted growth, chemical vapor deposition (CVD)
A vapor trapping design to modify the CVD synthesis process to facilitate and control the introduction of n-type carriers.
A p–n heterojunction composed of ZnO nanowires and a p+ silicon chip was achieved without any adulteration.
I–V curve for the p–n heterojunction composed of ZnO nanowires and the p+ silicon chip.
Au did not have any affect on the I–V curve.
the turn-on voltage of the heterojunction is about 0.5 V and the reverse sayuration current is 0.01 mA.