[공학] 논문분석-The effect of processing parameters on the properties of Ga-doped ZnO thin films by RF magnetron sputtering

 1  [공학] 논문분석-The effect of processing parameters on the properties of Ga-doped ZnO thin films by RF magnetron sputtering-1
 2  [공학] 논문분석-The effect of processing parameters on the properties of Ga-doped ZnO thin films by RF magnetron sputtering-2
 3  [공학] 논문분석-The effect of processing parameters on the properties of Ga-doped ZnO thin films by RF magnetron sputtering-3
 4  [공학] 논문분석-The effect of processing parameters on the properties of Ga-doped ZnO thin films by RF magnetron sputtering-4
 5  [공학] 논문분석-The effect of processing parameters on the properties of Ga-doped ZnO thin films by RF magnetron sputtering-5
 6  [공학] 논문분석-The effect of processing parameters on the properties of Ga-doped ZnO thin films by RF magnetron sputtering-6
 7  [공학] 논문분석-The effect of processing parameters on the properties of Ga-doped ZnO thin films by RF magnetron sputtering-7
 8  [공학] 논문분석-The effect of processing parameters on the properties of Ga-doped ZnO thin films by RF magnetron sputtering-8
 9  [공학] 논문분석-The effect of processing parameters on the properties of Ga-doped ZnO thin films by RF magnetron sputtering-9
 10  [공학] 논문분석-The effect of processing parameters on the properties of Ga-doped ZnO thin films by RF magnetron sputtering-10
 11  [공학] 논문분석-The effect of processing parameters on the properties of Ga-doped ZnO thin films by RF magnetron sputtering-11
 12  [공학] 논문분석-The effect of processing parameters on the properties of Ga-doped ZnO thin films by RF magnetron sputtering-12
 13  [공학] 논문분석-The effect of processing parameters on the properties of Ga-doped ZnO thin films by RF magnetron sputtering-13
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목차

1.Introduction
2.Experiments
3.Results and Discussion
4.Conclusion
본문내용
ZnO박막의 낮은 전기적 특성을 향상시키기 위해선 도핑이 필요 대부분 3족 원소로 도핑(B, Al, Ga, In)
대부분의 논문의 경우 Al도핑한 ZnO(AZO)에 관련되어있다 단점 : 성장과정에 있어서 높은 산소 반응성
대안 : Ga 도핑 ZnO (GZO)

특징 : AZO박막과 유사한 Zn2+ 이온반경
높은 Ga도핑 농도에서 ZnO 격자구조 변형의 최소화

실험 조건 요약 3wt% Ga Substrate : Glass Chamber Pres. : 4.9*10-6TorrAr Working Pres. : 3.5~7.5mTorr Temp. : 250~400℃ RF Power : 100~200W Ar Gas flow rate : 40sccm
분석기기X-ray Diffractometer (XRD) at 40kV, 30mAHall Measurement at room temp.

고정 조건-구동 압력 : 6mTorr-RF 출력 : 100W
변수 조건- 온도변화 250~400℃