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분야
hwp목 차
1. Purpose
2. Theory
2.1 MOS capacitor
2.1.1 Principal and structure
2.1.2 Flat band condition
2.1.3 Accumulation
2.1.4 Depletion
2.1.5 inversion
2.1.6 Threshold voltage
2.2 Shottky barrier
2.3 C-V graph
2.4 Graph shifting
3. Procedure
3.1 Experimental variables
3.2 Process
RCA cleaning
Oxidation
Deposition of metal
Measure of C-V graph
3.3 Equipment & method
3.3.1 E-beam evaporator
3.3.2 Atomic Layer Deposition
3.3.3 4275A multi-frequency LCR meter
4. Analysing result
4.1 Difference by frequency
(1) 120nm Al2O3
(2) 130nm SiO2
(3)140nm
4.2 Difference by Material
4.3 Difference by Thickness
5. Discussion
5.1 130nm & 140nm Threshold Voltage(VT) calculation
5.2 Ci upward
5.3 overall discussion
6. Role of members
6. Time scheduleTime
7. Reference
The measured MOS capacitance (called gate capacitance) varies with the applied gate voltage.
① Measurement of C-V characteristics
-Apply any DC bias, and superimpose a small (15 mV) ac signal
-Generally measured at 1 MHz (high frequency) or at variable frequencies between 1KHz to 1 MHz
-The dc bias VG is slowly varied to get quasi-continuous C-V characteristics
② C-V characteristics of MOS-capacitor on p- and n-type Si
The C-V data depends on the measurement frequency as well.
[Figure 11] Measured C-V characteristics on an P-type, N-type Si
2.4 Graph shifting
In MOS structure, we should consider non ideal effects when measure the capacitance according to applied voltage. They are 'fixed charge', 'mobile charge', and 'surface states'. When the fixed charge exists in oxide layer, it causes entire curve of graph to shift to the [Figure 12] C-V graph shift by direction of bias
side. These charges are generated by ions came in the process of deposition of oxide layer. When the charges exist in between the substrate and interface, the value of Vfb and C-V curve will shift by amount of the charge divided by Cox of Ci. The amount of shifting decreases as the position of fiexed charges is far from interface on the substrate and shifting will not exist any more when it is located on the interface between metal and interface. Mobile charges has the same effect. But it makes the curve shift toward applied voltage because the movement of charges is determined by applied voltage(-,+). It is known that mobile charges are generated when dielectric material has the impurities such as Na ion.
The term fast interface state refers to the fact that these defects can change their charge state relatively fast in response to changes of the gate bias. As the surface potential in a
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