[전자재료실험] The MOS capacitor

 1  [전자재료실험] The MOS capacitor-1
 2  [전자재료실험] The MOS capacitor-2
 3  [전자재료실험] The MOS capacitor-3
 4  [전자재료실험] The MOS capacitor-4
 5  [전자재료실험] The MOS capacitor-5
 6  [전자재료실험] The MOS capacitor-6
 7  [전자재료실험] The MOS capacitor-7
 8  [전자재료실험] The MOS capacitor-8
 9  [전자재료실험] The MOS capacitor-9
 10  [전자재료실험] The MOS capacitor-10
 11  [전자재료실험] The MOS capacitor-11
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[전자재료실험] The MOS capacitor에 대한 자료입니다.
목차
CONTENT

1. Schottky barrier

a) Advantages
b) Devices
c) Schottky emission


2. Thermal Equilibrium

Reverse Bias


3. Structure and theories of MOS capacitor


4. C-V measurement

5. References

본문내용
2. Thermal Equilibrium
Fermi level for the first time (Figure 3(c)) of the dash-dot line) is drawn.
 Semiconductor conduction band and valence band of the neutral zone draw. To display the semiconductor doping level of Fermi level for the proper placement of the band (as shown in Figure 3-a in the neutral zone - energy band diagram, the same must be present.
 In depletion layer of semiconductor, Fermi level of metals and semiconductors of the original difference between the curves corresponding to the amount of energy bands. This bending indicates the potential barrier in the semiconductor.

 Electric field to pass only because the atomic distance, metal within the energy - band is not observed any change in the diagram. In conclusion, the energy barrier for electrons in metals, respectively, is independent of the semiconductor doping and applied bias.

Reverse Bias
Now we can consider the effects forward bias station. Figure 3.21a the reverse bias (metal and a negative voltage between the N-type semiconductors) shows the case of . N-type semiconductor with a negative voltage applied to the metal and the amount of which is the semiconductor Fermi level above the Fermi level indicates the presence of
Reverse bias to the semiconductor energy barrier for the electron to increase the height of. Effectively barriers to increased energy in semiconductors electrons from the semiconductor through the contact to prevent the move.
The other hand, for electrons from the metal barrier ( ) is unchanged. Beyond the potential barrier from the metal may exist in N-type semiconductor the minimum number of electrons in
참고문헌
5. References

http://ecee.colorado.edu/~bart/book/book/chapter6/ch6_2.htm
Solid State Electronic Devices 6th edition, Ben G. Streetman – PEARSON EDUCATION
고체전자공학 제6판 벤스트리트만 외, 피어슨에듀케이션코리아
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