![[반도체공정] EUVL technology-1](http://images.happyhaksul.com/thumb/569/568782-0001.gif)
![[반도체공정] EUVL technology-2](http://images.happyhaksul.com/thumb/569/568782-0002.gif)
![[반도체공정] EUVL technology-3](http://images.happyhaksul.com/thumb/569/568782-0003.gif)
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![[반도체공정] EUVL technology-8](http://images.happyhaksul.com/thumb/569/568782-0008.gif)
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![[반도체공정] EUVL technology-10](http://images.happyhaksul.com/thumb/569/568782-0010.gif)
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분야
hwp1. Principles and working mechanism
1.1 Priciple
1.2 Working mechanism
2. Structure and materials for EUVL mask
3. Requirements of EUV resist
4. Current status/solution and future prospects
4.1 EUVL source
4.2 EUVL Mask
4.3 EUV resist
5. Reference
EUV is highly absorbed by all materials, even EUV optical components inside the lithography tool are susceptible to damage, mainly manifest as observable ablation. Such damage that is associated with the high-energy process of generating EUV radiation is a new concern specific to EUV lithography .
EUVL's shorter wavelength also increases flare, resulting in less than perfect image quality and increased line width roughness.
So to make fine pattern, a resist for extreme ultraviolet (EUV) lithography requires a small line edge roughness (LER) and a high sensitivity.
Requirement of EUV resist can be explained below the figure. 4. we can summary the requirements of EUV resist with four points.
First, Resist sensitivity have to target 10mJ/cm2 to keep the required source power in a realistic target range of some 100W @ 100wph tput.
Seconds, to enable pattern transfer of features down to 11nm, the resist blur(diffusion length) has to be reduces to at least 5nm.
Third, It is important to get good adhesion between photo-resist and silicon wafer. The smaller the pattern size is, the slimmer the thickness of resist coating on silicon wafer is. As a results, because of bad contact, photo-resist can be strip from silicon wafer after patterning(strip phenomenon). To improve this problem, there is resists that polyoxyethylene or polysiloxane is main chain of polymer. Synthesized resist like this have a good adhesion
[1] 물리학과첨단기술 January/February 2011 - 포토리소그래피의 기본원리 - 안진호 이상설
[2] The nature and characteristics of particles produced by EUV sources : Exploration, prevention and mitigation - ter verkrijging van de graad van doctor aan de
[3] Technische Universiteit Eindhoven
[4] D.T. Attwood, H.M. Hertz, K. Midorikawa, and M. Obara, Introduction to the issue on short wavelength and EUV lasers
[5] Gordon E. More: “"Cramming more components onto integrated circuits”" Electronics, Volume 38, Number 8, April 19, 1965
[6] www.optik-photonik.de
[7] John E. Bjorkholm, "EUV Lithography-The Successor to Optical
Lithography, Intel Technology Journal
[8] Donald Sweeney, "Extreme Ultraviolet Lithography",
Lawrence Livermore National Laboratory
[9] http://www.semipark " NGL 기.술.개.발.현.황.“
[10] D. Attwood, Soft X-rays and Extreme Ultraviolet Radiation
(Cambridge University Press, Cambridge, 1999)
[11] S. Bajt, SPIE talk July 31, 2001, San Diego, SPIE Proc. Vol. 4506-12
[12] S. Okazaki, 6th EUV Symposium, Sapporo, Japan(2007)
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[14] T. Miura et al, 6th EUV Symposium, Sapporo, Japan(2007)
[15] V.Banine et al, 6th EUV Symposium, Sapporo, Japan(2007)
[16] S. Uzawa et al, 6th EUV Symposium, Sapporo, Japan(2007)
