We investigated that electron beam irradiation is the effective method to control the sprouting of sweetpotato roots without changing of food quality characteristics. In 12 and 25oC storage after electron beam irradiation, all control samples were sprouted from 6 and 4 weeks after storage, respectively. The sprouting rate of control increased with time and the rate reached to 11.2-12.4 and 70.5-74.2% at 8 weeks after 12 and 25oC storage. Also, the sprouting of middle and below positioning sweetpotato roots at 12 and 25oC storage after irradiation reached to 8.6-11.3 and 42.7-48.7% after a storage period of 8 weeks, respectively. However, the sprouting of all sweetpotato roots stored at 4oC and upper (0-7 cm) positioning samples of box stored at 12 and 25oC with electron beam was completely inhibited due to increase peroxidase and indole acetic acid (IAA) oxidase activity. Also, all samples with electron beam such as hardness, pH, sugar content, weight loss, and vitamin C and dacarotene content did not differ from that of the control. Therefore, if electron beam will be irradiated to sweetpotato roots above 0.1 kGy before packing, it will effectively inhibit their sprouting stored at 25oC without the change of food quality characteristics.