소개글
[반도체] Epitaxy 레포트에 대한 자료입니다.
목차
1.Introduction
2. Typical Epitaxy Techniques
MBE (Molecular-Beam Epitaxy)
MOVPE (Metal Organic Vapor Phase Epitaxy)
HVPE (Hydride Vapor Phase Epitaxy)
LPE (Liquid Phase Epitaxy)
ALE (Atomic Layer Epitaxy)
3. In-situ monitoring of epitaxy processes
4. Mismatch(Misfit) & Dislocation
5. References
본문내용
Advantage
① 낮은 성장률을 가지면서 높은 질의 epilayer을 생성
② 다양한 dopant 성분을 흡착이 가능하고, 복잡한 구조를
가진 다양한 layer를 생성
Disadvantage
① 고진공으로 인한 작동비용이 높음
② source material 교체로 인한 chamber 내부의 오염
③ As와 P이 포함되어 있는 alloy의 성장 제한
Real-time Monitoring ToolsThe MBE growth can be monitored in real-time using a Reflective High Energy Electron Diffraction (RHEED) system. The system includes an electron gun which directs an electron beam towards the substrate at a shallow angle (1-2°), and a phosphor screen which detects the diffracted beam.
As the substrate surface varies (from rough to smooth) so does the pattern detected at the screen.
참고문헌
1. Organometallic vapor-phase Epitaxy. 2nd edition, Gerald B. Stringfellow
2. Atomic Layer Epitaxy, T. SUNTOLA and M. SIMPSON
3. Crystal Growth For Beginners;
Fundamentals of Nucleation, crystal Growth and Epitaxy, Ivan V Markov
4. Silcon-Molecular Beam Epitaxy Volume 1,2, Erich Kasper and John C. Bean
5. www.sandia.gov/.../photonics/gallery006.html
6. www.acsu.buffalo.edu/~tjm/
7. www.seas.ucla.edu/prosurf/MOCVD.htm
8. http://mateng.cnu.ac.kr/zb41/zboard.php/