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분야
pptx2.Experimental details
3.Results and discussion
4.Summary
Energy bandgap of MgxZn1−xO : 3.37~ 7.8 eV (by incorporating Mg into ZnO)
However, the crystal structure of MgO is different from that of ZnO
- MgO : rock-salt cubic structure. ZnO : wurtzite hexagonal structure.
The different crystal structure induces the lattice mismatch
When MgxZn1−xO becomes a metastable alloy, it is expected that the exchange between the ions is easy and the solubility will increase
- because the ionic radii of Mg and Zn atoms are similar
MgxZn1−xO films (Mg content of ~50 at.%) have a wurtzite structure.
Above that content, the wurtzite structure was transformed into the cubic structure.
The crystal quality depends on growth conditions
- such as the substrates, growth temperature, buffer layers and sputtering power
Sputtering power has a large influence on the composition and
crystal quality of MgxZn1−xO films.
MgxZn1−xO films were grown on GaN/sapphire (0001) substrates
Using a RF magnetron sputtering system
In a high vacuum (>5×10−6 Torr) chamber
The ZnO (4 in., 99.9999%) and MgO (4 in., 99.9999%) targets
Co-sputtered by the gas mixture of high purity argon and oxygen
- Ar and O2 flow rates were 20 and 10 sccm
The growth temperature and time were 700 °C and 95 min
The RF power of the ZnO target was fixed to 300W
and the RF power of the MgO target was varied from 0 to 300W
