- interfacial energy
Following the treatment given in Sec. III A1 for the interaction energy across the crystalline-amorphous- interface
1. the difference in ⅰ)bulk ⅱ)surface ⅲ)interfacial
energy of {Al2O3}-/2O3>-
2. The stability of the oxide films as a function of growth temperature, oxide filmthickness, crystallographic orientation of
2.3 C-V graph
The measured MOS capacitance (called gate capacitance) varies with the applied gate voltage.
① Measurement of C-V characteristics
-Apply any DC bias, and superimpose a small (15 mV) ac signal
-Generally measured at 1 MHz (high frequency) or at variable frequencies between 1KHz to 1 MHz
-The dc bias VG is slowly varied to get quasi-continuous C-V characteristics
② C-V chara
films were prepared on the ZnO pre-sputtered glass substrate using RF magnetron sputtering system. The PureZnO target was made from high purity ZnO powder (99.99 %) . The MZO/GZO targets were made from high purity ZnO powder (99.99 %) doped with the desired amount of high purity MgO, Ga2O3, powder (99.99 %), respectively. Prior to the deposition, the glass substrates were cleaned using the typica
The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The purpose of the inversion layer's forming is to allow the flow of electrons through the gate-source junction. The voltage of oxide is given by
V_OX= 1/C_OX 2√(qN_A ε_Si V_0 )
SiO_2 V_O
The GZO, MZO thin films were prepared on ZnO pre-sputtered glass substrate using RF Sputtering Technique. Morphological, Structural and Electrical properties of deposited films were investigated in comparison with pure ZnO Thin film by scanning electronic microscopy (SEM), Atomic force microscopy (AFM), X-ray diffraction (XRD), PL spectra and other electrical analytic method. SEM images showed al