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Distinguished by glass transition point Tg
Glass-like hard phase -> Robber-like soft phase
Distinguished by melting point Tm
Highly tangled polymer chain – Semi crystalline
The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The purpose of the inversion layer's forming is to allow the flow of electrons through the gate-source junction. The voltage of oxide is given by
V_OX= 1/C_OX 2√(qN_A ε_Si V_0 )
SiO_2 V_O
which correspond to the following conditions
1. The angle of incidence = angle of scattering.
2. The pathlength difference is equal to an integer number of wavelengths.
- Aluminum oxide
Electrical insulator
relatively high thermal conductivity
Trigonal, hR30
- Applications
Refractories, ceramics, polishing
Health and medical applications
Hard protective coating.