effect
해결
SiO2에 비해 큰 유전상수
물리적 두께 증가
전자의 터널링 억제
Motivation
High Density
- More transistors onto a smaller chip
- Cost effective from more chips on the same wafer
High Performance
- Higher current drive
- Smaller capacitance
- Reduced gate delay
Low Voltage & Low Power
- Mobile system application
high mobility of charge carriers in the MOSFET channel
Minimization of the concentration of electrically charged and/or electrically active defects in the film
Film morphology - Amorphous or epitaxial films seem to be the promising candidates - polycrystalline materials are generally ruled out.
Interface quality
Compatibility with the current or expected materials to be used in processing
the same effect. But it makes the curve shift toward applied voltage because the movement of charges is determined by applied voltage(-,+). It is known that mobile charges are generated when dielectric material has the impurities such as Na ion.
The term fast interface state refers to the fact that these defects can change their charge state relatively fast in response to changes of thegate bia
High Pressure for Plasma
- Power for Frequency
- Gas concentration
- Deposition : 100nm
Why we use Sputter?
- Good for high Melting point Material
- Thickness uniformity
- Positive adhesion
- But, law growth rate and step coverage
Patterning : Photo Lithography
(Clear than Shadow Mask)
Why Al is used for electrode?
(Especially Gate)
- Law melting
high. Horizontal bars should be located only at the top and bottom. Walls along sidewalks and property lines should be constructed only where there is a need for privacy or street noise mitigation. And Barriers or other devices should be installed to prevent misuse of public facilities, e.g., bathing in fountains. And pedestrian tunnels should be well lighted andgated, with thegates being close