Layers>
- SiO2의 부도체 성질로 부터 집적회로내 금속층
사이의 효과적인 절연체로 사용가능
- 오염물질의 확산을 최소화
자연 산화물 – 오염물질이 대부분. (기억저장 공간이나 막 안정화용 사용)
게이트 산화물 – 트랜지스터의 게이트와 소스/드레인의 유전체로 사용
자계
oxide layer, it causes entire curve of graph to shift to the [Figure 12] C-V graph shift by direction of bias
side. These charges are generated by ions came in the process of deposition of oxide layer. When the charges exist in between the substrate and interface, the value of Vfb and C-V curve will shift by amount of the charge divided by Cox of Ci. The amount of shifting decreases as the posit
4. Equipment
4.1 RCA cleaning
RCA cleaning is a series of rinsing procedure prior to experiment with Si wafer. The purpose of the RCA clean is to remove organic contaminants (such as dust particles, grease or silica gel) from the wafer surface. There are three steps to be performed. The first step is to remove organic contaminant from surface of wafer. Second step is to remove any oxide layer
The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The purpose of the inversion layer's forming is to allow the flow of electrons through the gate-source junction. The voltage of oxide is given by
V_OX= 1/C_OX 2√(qN_A ε_Si V_0 )
SiO_2 V_O
oxide Nanotube를 만드는 방법을 살펴보면, 우선 틀이 되는 CNT에 Layer-by-Layer assembly를 통해 polyelectrolytes를 붙인다. 그 다음, 이온화합물 상태의 목표 금속(산화물이 될)을 이온 상태의 복합체 (Ion Complex)를 형성할 수 있도록 준비한다. (예를 들어 InCl3 with citric acid) 이 복합체의 전체 극성에 따라 CNT에 붙이는 po