barrier in the semiconductor.
Electric field to pass only because the atomic distance, metal within the energy - band is not observed any change in the diagram. In conclusion, the energy barrier for electrons in metals, respectively, is independent of the semiconductor doping and applied bias.
Reverse Bias
Now we can consider the effects forward bias station. Figure 3.21a the
4. Equipment
4.1 RCA cleaning
RCA cleaning is a series of rinsing procedure prior to experiment with Si wafer. The purpose of the RCA clean is to remove organic contaminants (such as dust particles, grease or silica gel) from the wafer surface. There are three steps to be performed. The first step is to remove organic contaminant from surface of wafer. Second step is to remove any oxide layer
9. n-type Semiconductor에서 온도에 따른 Carrier 농도 변화
매우 낮은 온도에서는 intrinsic EHP가 거의 존재하지 않는다. 온도가 증가함에 따라 도너의 전자들이 Conduct band로 옮겨지고 약 100K에서 모든 도너 원자가 이온화되는 과정이 발생한다. 이후 ni가 Nd와 비등해 질 때까지(intrinsic carrier 농도가 도너 농도와
2.3 C-V graph
The measured MOS capacitance (called gate capacitance) varies with the applied gate voltage.
① Measurement of C-V characteristics
-Apply any DC bias, and superimpose a small (15 mV) ac signal
-Generally measured at 1 MHz (high frequency) or at variable frequencies between 1KHz to 1 MHz
-The dc bias VG is slowly varied to get quasi-continuous C-V characteristics
② C-V chara
위의 두 식을 살펴보면 Gate voltage가 상승하게 되면 처음 slope가 상승하게 되고 따라서 saturation voltage도 상승하게 된다. 또한 여기서 Cox는 εox/xox이므로 oxide층의 두께가 두꺼워질수록 앞서본 Vth에 대한 식에 따라 Vth가 커져 ID-VG그래프가 우측으로 shift하게 되고, 그래프의 slope역시 Cox가 작아짐에 따라 줄