The ZnO and ZnMgO nanostructures were grown on silicon substrates at different temperatures, using gold metal as a catalyst in the presence of argon as a carrier gas in a conventional tubefurnace.
The effects of the substrate temperatures, gold catalyst, and source material preparation on the morphological and optical properties of the nanostructures were investigated.
Si substrates were c
2. Experimental
The films were deposited in a conventional horizontal furnace on Si(1 1 1) substrates. SnO2 (99.99%) (Mol10:2) and ZnO/Ge slices (99.999%, purity), (Mol 10:2) powders were used as the source materials for growth of the Sn- and Ge-doped ZnO films, respectively. The ZnO/SnO2 powder was placed on an alumina boat and inserted into a horizontal tubefurnace, in order to serve as th
tube, separated typically by 7–10 cm.
This small quartz tube was then placed inside a horizontal tubefurnace
ZnO nanocrystals were prepared by a chemical solution deposition (CSD)
The 0.75M precursor solution was deposited onto the Si substrate by spin coating
The as-deposited films were then preheated on a hotplate at 300 C for 10 min. Finally the sample was annealed at 500
furnace or rapid thermal processor (RTP)
– Dose (Q0) can be monitored in situ
Process Comparison
Thermal Diffusion Ion Implantation
Inexpensive equipment
• One process/furnace tube
• Uniformity ± 5-10%
• Need hard mask (SiO2 or Si3N4)
• Thermodynamically controlled
• Dopants electrically active
Very expensive equipme
나. 실험 준비물
BOE, DI water, Tweezer, Teflon beakers, Safety gadgets, Tubefurnace, ellipsometer, Si(100) wafer:p-type 시료
다. 실험 과정
1) BOE(Buffered Oxide Etchants) 용액을 이용하여 기존에 존재하는 Oxide층과 Wafer의 표면 유기물, 이온, 금속 물질을 화학적으로 제거한다.( :계면활성제)
- Wafer를 BOE 용액(NH4F:H2O:계면활성제)에