Ⅰ. X선(엑스선)회절실험 소개
1912년 X-선의 파장을 측정하는 방법이 개발되었다. 회절을 이용한 측정법이 가장 이상적인 것으로 생각되었으나 만족할 만한 결과를 얻기 위해서는 회절격자의 인접선 사이의 간격이 빛의 파장과 거의 같아야 하며, 이와 같이 X-선의 파장에 대응되는 좁은 간격의 회절격
ultraviolet curable photopolymer and an ultraviolet laser to build layers
The laser beam traces a cross-section of the part pattern on the surface.
Exposure to the ultraviolet laser light cures and solidifies the pattern.
After the pattern has been traced, the platform descends by a distance equal to the thickness of a single layer.
SLS - Selective Laser Sintering
An additive manufacturi
SEM?
Scanning electron microscope
To analysis surface of specimen
Qualitative analysis at certain point
Operation principal of SEM
Emission electron from filament
Accelerate electron by electric field
Focusing electron by lens → mono-chromatic electron beam
Generate secondary electron and etc.
Detection of electron
ultraviolet (EUV) lithography requires a small line edge roughness (LER) and a high sensitivity.
Requirement of EUV resist can be explained below the figure. 4. we can summary the requirements of EUV resist with four points.
First, Resist sensitivity have to target 10mJ/cm2 to keep the required source power in a realistic target range of some 100W @ 100wph tput.
Seconds, to enable patter
of the material such as glass.
For many of Materials, if we drop water, it makes waterdrop. However, for the material which coated TiO2, after it contacts with ultraviolet, the drop of the water doesn't make waterdrop; it just spread out. At the material which is coated with Titanium dioxide, the dirtiness is easily cleared and the water drop doesn't appear after contact with the water.