ofhierarchical ZnOnanostructure with widths of 70–-120 nm and average length of around 600 nm. The high-magnification image of the single nanorod on the side-wall displays columniform structure with a conic tip which is quite different from the hexagonal structure in Fig. 1(d), indicating that the ZnO nanorods are not synthesized through the layer-by-layer growth model. It is noticed that
ZnO is a semiconductor material
A peculiarity ofZnO nanowire : many novel magnetic, electrical and optical properties
Various approaches ofZnO nanowire : vapor-phase method, rapid thermal evaporation, sputter deposition, template-assisted growth, chemical vapor deposition (CVD)
A vapor trapping design to modify the CVD synthesis process to facilitate and control the introduction of n-typ
∙ ZnO is an good candidate for fabrication of optoelectronic
andelectronic device.
∙ 1D ZnOnanostructures have many properties.
∙ It is that a simple two-step thermal evaporation process
to synthesize the hierarchical pure ZnOnanostructures of 6-fold structural symmetry without any metal catalyst.
∙ Pure zinc powder(99.99%)
of cross-linked nanonetworked with nanometallic electronic conductivity has been reported in a previous communication. Bard and co-workers have extended this method for the fabrication of self- assembled spherical ultramicroelectrodes by confining the self-assembly process to the tip end of a quartz micropipet.
The present paper focuses on the unusual optical andelectronic properties of multi