formula
KH₂PO₄
Melting point
96℃
Specific gravity
2.238g/ml
Solubility
26g/100gH₂O (25℃)
Molecular weight
136.09
PH
4.2~4.9 (25℃)
system ofcrystallization
tetragonal system
Table. 3. KDP(KH₂PO₄)
The growth of KDP and CuSO₄single crystals were carried out bythe temperature decrease method andthe constant temperature method. The
the samples. Fig. 1 (a) isthe typical XRD pattern ofZnO films with a preferred C axis orientation of (002) which has a full width at half maximum (FWHM) of 0.3°. The XRD pattern of sample (b) also shows the high C axis oriented ZnO grains with FWHM of 0.5°, which suggests that thecrystallization ofZnO turns worse. Meanwhile, other three additional peaks attributed to Zn2GeO4 are observed in
and Zn ion.
These characteristics lead tothe expectation that it is much easier to change the electronic structure around the band edge.
- The effects of doping and substrate temperature on the structural and optical properties ofthe Ge doped ZnO films wereinvestigated by XRD, XPS, UV, PL
- The XRD patterns show that Zn2GeO4 phase was formed inthe films andthecrystallization of
In a high vacuum (>5×10−6 Torr) chamber
TheZnO (4 in., 99.9999%) and MgO (4 in., 99.9999%) targets
Co-sputtered bythe gas mixture of high purity argon and oxygen
- Ar and O2 flow rates were 20 and 10 sccm
The growth temperature and time were 700 °C and 95 minThe RF power oftheZnO target was fixed to 300W
andthe RF power ofthe MgO target was varied from 0 to 300W
Working inthe static mode, the bending arises as a consequence of a surface stress change induced by any molecular reaction which takes places on only one ofthe cantilever surfaces. Theinduced surface stress change could be positive or negative, depending on the surface deformation generated. The factors and phenomena responsible for this change istoday not fully understood due tothe complex