분야
pptx2. Vapor-Liquid-Solid growth
3. Template based electrode
4. Fabrication of SET
5. GaAs quantum dot SET
1. I-V relation
2. Extra small size of application device
3. Very low driving voltage
4. Short switching time
5. Better sensing device
Vapor-liquid-solid growth
Direct Observation of Vapor-Liquid-Solid Nanowire Growth
(J. Am. Chem. Soc. 2001, 123, 3165-3166)
Template-based electrode
Au soucre & drain electrode using templating mechanism
Shadow mask evaporation : two metal depositions followed by an oxidation and a further metal deposition from a different angle form an overlap of two stripes
Why GaAs quantum dot ?
Proper quantum dot size enough to be placed between source and drain by using templates-based technique
2) Band gap of GaAs (1.42eV~1.52eV) higher than basic thermal energy (0.0259eV)
3) GaAs quantum dot has Coulomb blockade
(Kyung Guk Ryu , Pohang University of Science and Technology )
2. Direct Observation of Vapor-Liquid-Solid Nanowire Growth
(J. Am. Chem. Soc. 2001, 123, 3165-3166)
3. Single-Electron Tunneling Through a Heavily Doped GaAs Quantum Dot (Kyung Guk Ryu , Pohang University of Science and Technology )
4. Wikipedia: Free-encyclopedia, http://www.wikipedia.org
5. Google search, http://www.google.co.kr
