3. Requirements of EUV resist
EUV is highly absorbed by all materials, even EUV optical components inside the lithography tool are susceptible to damage, mainly manifest as observable ablation. Such damage that is associated with the high-energy process of generating EUV radiation is a new concern specific to EUV lithography .
EUVL's shorter wavelength also increases flare, resulting in less
4. Equipment
4.1 RCA cleaning
RCA cleaning is a series of rinsing procedure prior to experiment with Si wafer. The purpose of the RCA clean is to remove organic contaminants (such as dust particles, grease or silica gel) from the wafer surface. There are three steps to be performed. The first step is to remove organic contaminant from surface of wafer. Second step is to remove any oxide layer
structures on both planar and non-planar surfaces, and generate both 2D and 3D structures, while photo-lithography only on planar surface and 2D structures. Also, it doesn't need to use light or other high energy particles. Photo-lithography can be applied to only polymers with photo-sensitive, but soft lithography can be applied to various polymers, like unsensitized polymers, precursor polymers