[반도체공정실험] C-V Characteristic By Different Oxidation Substance At MOS Capacitor

[반도체공정실험] C-V Characteristic By Different Oxidation Substance At MOS Capacitor-3

[반도체공정실험] C-V Characteristic By Different Oxidation Substance At MOS Capacitor-4

[반도체공정실험] C-V Characteristic By Different Oxidation Substance At MOS Capacitor-5

[반도체공정실험] C-V Characteristic By Different Oxidation Substance At MOS Capacitor-6

[반도체공정실험] C-V Characteristic By Different Oxidation Substance At MOS Capacitor-7

[반도체공정실험] C-V Characteristic By Different Oxidation Substance At MOS Capacitor-8

[반도체공정실험] C-V Characteristic By Different Oxidation Substance At MOS Capacitor-9

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소개글

[반도체공정실험] C-V Characteristic By Different Oxidation Substance At MOS Capacitor에 대한 자료입니다.

목 차
1. Purpose

2. Procedure

3. Characteristics of materials

3.1 In metal

3.2 In oxidation (Dielectric material)

3.2.1 High-K

3.2.2 Low-K

4. Equipment
4.1 RCA cleaning

4.2 4275A multi-frequency LCR meter
4.3 E-beam evaporation
5. MOS capacitor

5.1 Principle and structure
5.2 Flat band condition (Equilibrium VG = 0)
5.3 Accumulation (VGB

본문내용

4. Equipment
4.1 RCA cleaning
RCA cleaning is a series of rinsing procedure prior to experiment with Si wafer. The purpose of the RCA clean is to remove organic contaminants (such as dust particles, grease or silica gel) from the wafer surface. There are three steps to be performed. The first step is to remove organic contaminant from surface of wafer. Second step is to remove any oxide layer that may have built up. The last step removes any ionic or heavy metal contaminants.
The RCA clean procedure should be performed immediately prior to any crucial step, especially those involving high temperatures. For safety reasons, all activities in the RCA clean procedure should be performed in a Clean Station Work Area which is located under an exhaust fume hood.

[Figure 1] RCA cleaning
the RCA clean proceedure consists of the following steps
: Chemical Storage ⇒ Mix Organic Solution ⇒ Mix Ionic Solution ⇒ Mix HF Solution ⇒ Set-Up Bubbler Rinse ⇒ Organic Clean ⇒ Oxide Clean ⇒ Ionic Clean ⇒ Transporting Wafers ⇒Drying

참고문헌

9. Reference
-http://ecee.colorado.edu/~bart/book/moseb.htm
-Ben Streetman, Sanjay Banerjee, "Solid State Electronic Device", PEARSON Education Korea, 6th ed., pp.292~313, 2005
-류경국, "Fabrication and Characterization of Metal-Oxide-Semiconductor (MOS) Capacitor", 2006
-http://www.ecse.rpi.edu/ecse_search.html
-http://ceot.ualg.pt/OptoEl/theory/2terminal/
-Brian Chapman, “Glow Discharge Process”, John Wiley & Sons, Inc. (1980)
-Milton Ohring, “The Materials Science of Thin Films”, Academic Press, Inc., Chapter 3,
(1992)
-W. R. Grove, Philos. Trans. R. Soc. London, A142 (1852) 87.
-F. Brown and J. A. Davies, Can. J. Phys., 41 (1963) 844.
-T. M. Buck, “Methods of Surface Analysis”, A. W. Czanderna (ed.), Elsevier Scientific
Publishing Company, Amsterdam, The Netherlands, Chap. 3 (1975) 75.
-P. Sigmund, “Sputtering by Particle Bombardment I”, R. Behrisch (ed.) Topics in Applied
Physics, Springer-Verlag, Berlin, Germany, Vol. 47 (1981) 9.
-G. Gautherin, “Ractivit dans les plasmas”, A. M. Pointu and A. Ricards (eds.), Editions
de Physique, Les Ulis, France (1984) 243.
-Y. Pauleau “Physical Vapor Deposition Techniques I: Evaporation and Sputtering” in
“Advanced Techniques for Surface Engineering”, Edited by W. Gissler and H. A. Jehn,
Kluwer Academic Publishers, (1992)
-W. D. Westwood, in “Physics of Thin Films”, Vol. 14, eds. M. H. Francombe and J. L.
-http://www.tungsten.com/tipsbeam.pdf
-http://en.wikipedia.org/wiki/Electron_beam_physical_vapor_deposition
-http://www.ece.gatech.edu/research/labs/vc/processes/rcaClean.html
-‘Low-K’란무엇일까" - 김윤주 차장 (기술연구소)
-en.wekipedia.org
-http://blog.naver.com/dadarios?Redirect=Log&logNo=50042381491
-"High-k dielectric? Low-k dielectric?" - Jerzy Ruzyllo, Penn State University,
Semiconductor Notes, Note No 1, posted April 15, 2003.

#MOS #반도체공정실험 #CV

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