2.3 C-V graph
The measured MOS capacitance (called gate capacitance) varies with the applied gate voltage.
① Measurement of C-V characteristics
-Apply any DC bias, and superimpose a small (15 mV) ac signal
-Generally measured at 1 MHz (high frequency) or at variable frequencies between 1KHz to 1 MHz
-The dc bias VG is slowly varied to get quasi-continuous C-V characteristics
② C-V chara
4. Equipment
4.1 RCA cleaning
RCA cleaning is a series of rinsing procedure prior to experiment with Si wafer. The purpose of the RCA clean is to remove organic contaminants (such as dust particles, grease or silica gel) from the wafer surface. There are three steps to be performed. The first step is to remove organic contaminant from surface of wafer. Second step is to remove any oxide layer
condition 실험장치
-유체가 없을 때
V(전압) I(전류)
4ms 3.85 V 0.086 A
2ms 6.66 V 0.1 A
-유체가 있을 때 ①
V(전압) I(전류)
4ms 4.78 V 0.167 A
2ms 8.37 V 0.28 A
-유체가 있을 때 ②
V(전압) I(전류)
4ms 4.64 V 0.175 A
2ms 8.2 V 0.28 A
2) Viscometer (점도계)
-두 Chamber 사이의 시간차
① ②
time 86 sec 86sec
4. 결과 토의