oxide layer, it causes entire curve of graph to shift to the [Figure 12] C-V graph shift by direction of bias
side. These charges are generated by ions came in the process of deposition of oxide layer. When the charges exist in between the substrate and interface, the value of Vfb and C-V curve will shift by amount of the charge divided by Cox of Ci. The amount of shifting decreases as the posit
4. Equipment
4.1 RCA cleaning
RCA cleaning is a series of rinsing procedure prior to experiment with Si wafer. The purpose of the RCA clean is to remove organic contaminants (such as dust particles, grease or silica gel) from the wafer surface. There are three steps to be performed. The first step is to remove organic contaminant from surface of wafer. Second step is to remove any oxide layer
1. 용접의 개념
금속과 금속을 충분히 접근시키면 이들 사이에는 뉴튼의 만유인력에 따라 금속 원자간에 인력이 작용하여 서로 결합하게 된다. 이 결합을 이루려면 원자들을 10nm정도 접근시켜야 하는데 이와 같은 일은 평상시에는 일어나지 않는다. 그 이유는 보통조건에서는 금속표면에 산화막이 존
The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The purpose of the inversion layer's forming is to allow the flow of electrons through the gate-source junction. The voltage of oxide is given by
V_OX= 1/C_OX 2√(qN_A ε_Si V_0 )
SiO_2 V_O