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분야
ppt-Plasma
-Etching equipment
-Dry Etching process
2. Dry Etch application to semiconductor
3.Summary
2. Ashing; PR 제거
3. Plasma Nitridation; 얇은 산화막 등 유전막의 특성 개선을 위한 표면 처리
4. Plasma Oxidation; Transistor의 특성 개선을 위한 표면 처리
5. 유전막 PE-CVD (Plasma Enhanced Chemical Vapor Deposition); SiON 등의
유전막 증착
6. Barrier Metal PE-CVD; TiN 등의 Barrier Metal 증착
7. Si treatment; Contact 저항 등의 개선을 위한 표면 처리
8. Plasma Doping; Counter-doping, Shallow Junction 형성 등을 위한 이온 주입
⇒ 반도체 제조 공정의 50% 이상이 플라즈마를 활용한 공정임.
Electrostatic E-Field
Coupling of ion energy & ion flux
high pressure operation
low ion density (~1E9/cm3)
Inductive E-Field
Decoupling of ion energy & ion flux
High density ion flux (~1E11/cm3)
low pressure operation
Richard C. Jaeger, Introduction to microelectronic fabrication volume 5. 2nd ed, (Eds:Gerold W. Neudeck,and Robert F. Pierret), Prentice Hall, New Jersey, 2002.
Sami Franssila, Introduction to mirco fabrication, Wiley, West Sussex, 2004.
2007 삼성전자 반도체 소자 수업 자료
