Crosstalk among neighboring interconnects
Capacitive crosstalk roughly proportional to kc=CIMD /CILD
⇒ Mainly fixed by the aspect ratio of lines and vias
⇒ Crosstalk level increases at each new generation
Induces delay uncertainty
A low-κ dielectric materials with a dielectric constant less than the dielectric constant of silicon dioxide, κ<4
First low-κ was applied at the
Graphite
Stacked graphene layers, crystalline.
0.335 nm spacing betwwen planes.
About 10% volume expansion upon
Li intercalaion
Theoretical maximum capacity is
372mAl/g(LiC6)
Coating by Conductive Materials
The major effects and advantages
No classical binder is required to prepare mechanically and electrochemically stable anodes.
Irreversible capacity in the first cycle
B. Solution-Liquid-Solid Growth of Indium Phosphide Fibers from Organometallic Precursors: Elucidation of Molecular and Nonmolecular Components of the Pathway
Solution-phase organometallic syntheses of semiconductors are used for the growth of high-quality quantum dots,1-3 and are potentially useful for the deposition of semiconductor materials on thermally sensitive substrates such as polymers
Significantly higher surface area and much narrower pore size distribution in the mesopore region
A large amount of amine-type CO2 capturing agent into its mesopores in a well dispersed manner
Synthesis of MA
PEI impregnation on MA
Amine grafting on MCM-41
Characterization of the materials prepared
CO2 adsorption-desorption measurement
Al(i-PrO)3 (41.68g)+ Alcohol solvent