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분야
hwp■ Experiment Process
Photolithography
○ Cleaning
○ Photoresist(PR) spin coating
○ Soft baking
○ Exposure
○ Developing
○ Hard baking
○ Etching
Doping
○ Piranha treatment (in Piranha solution 20minute)
○ Dopamt spin coating (dopant is phosphorus)
○ Doping process by RTA (O2:N2 partial pressure is 1:4)
○ Removing remained Dopant
Deposition of SiO2
○ Alpha step
○ PECVD
Isolation process
○ Photolithography
○ Wet etching
Source Drain Opening
Metal Deposition
○ Metal deposition
○ PR Patterning
○ Metal patterning
■ Experiment Analysis
○ Threshold Voltage
○ VDS = constant ⇒ ID ― VG Curve ( Logarithm scale )
○ VGS = constant ⇒ ID ― VD Curve
■ References
○ PECVD
∙ What is PECVD?
⇒ Radio frequency(RF) is used to induce plasma in the deposition gas.
⇒ This results in a higher deposition rate at relatively low temperatures.
⇒ With the plasma enhanced CVD process is the deposition at temperature around 300℃ allows.
⇒ The temperature will be through encouragement of a plasma with high frequency electric fields triggered.
⇒ The silicon is on the gas SiH2Cl2, of which it is at relatively low temperatures separates.
⇒ With the support of the plasma excitation are the low process temperatures at 300℃ is possible.
⇒ The deposition of SiO2 and silicon nitride Si3N4 at low conformity.
⇒ High growth speed up to 500 nm/min is possible.
∙ Deposit at low temperature because of plasma.
∙ High vacuum and taking long time.
⇒ Increase the temperature up to 250℃ despite of low temperature.
SiO2
N-type
Si
N-type
PECVD
Deposited SiO2 by PECVD
Isolation process
○ Photolithography
PR
SiO2
N-type
Si
N-type
⦁Deposit photoresist on SiO2.
SiO2
N-type
Si
N-type
⦁Expose UV light. The part of unexposed removes because of negative PR.
○ Wet etching
SiO2
N-type
Si
N-type
SiO2
⦁SiO2 that does not have PR is removed by wet etching and also remaining PR is removed by acetone.
Source Drain Opening
○ SiO2 Deposition ( 100nm ) ○ PR(positive) Coating
SiO2
SiO2
N-type
Si
N-type
SiO2
⇒
PR
SiO2
SiO2
N-type
Si
N-type
SiO2
• Introduction To Microelectronic Fabrication - R.C. Jaeger
• Solid State Electronic Devices - Ben Streetman, Sanjay Banergee
• Semiconductor Manufacturing Technology - Quirk, Michael, 1953-Serda, Julian
• PH Effect at Doped Si Semiconductor Interfaces - 천장호 , 나극환
• http://www.mems-exchange.org/MEMS/processes/
• http://ece.utep.edu
• http://www.semipark.co.kr/semidoc/waferfab/
• http://www.udia.co.kr/rnd/lowtem.html
• http://www.kdia.org/ko/lib/theory02.jsp/ - Korea display industry association
