ZnOthinfilms were prepared on the glass substrate using RF magnetron sputtering system. And Mg, Ga doped (3 wt%) ZnOthinfilms were prepared on theZnO pre-sputtered glass substrate using RF magnetron sputtering system. The PureZnO target was made from high purity ZnO powder (99.99 %) . The MZO/GZO targets were made from high purity ZnO powder (99.99 %) doped with the desired amount of high pu
The GZO, MZO thinfilms were prepared on ZnO pre-sputtered glass substrate using RF Sputtering Technique. Morphological, Structural and Electrical properties of deposited films were investigated in comparison with pure ZnOThinfilmby scanning electronic microscopy (SEM), Atomic force microscopy (AFM), X-ray diffraction (XRD), PL spectra and other electrical analytic method. SEM images showed al
system
Table. 2. CuSO₄5H₂O
Molecular formula
KH₂PO₄
Melting point
96℃
Specific gravity
2.238g/ml
Solubility
26g/100gH₂O (25℃)
Molecular weight
136.09
PH
4.2~4.9 (25℃)
systemof crystallization
tetragonal system
Table. 3. KDP(KH₂PO₄)
The growth of KDP and CuSO₄single crystals were carried out bythe temperature decrease
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• Product-in-Place: PPL
Dramas and movies filming in com
the
surface
Source material is coated onto the target
surface
ADVANTAGE
Simple process
Fast deposition speed
Cheap process device
1. Partially different thickness
2. Difficult to control the element ratio
3. Hard to deposition the complex material layer
4. Low film quality
3.Material to be evaporated by e-beam
- E-beam dashes against
material
- E-beam trans