to a target and stick ontothe
surface
Source material is coated ontothe target
surface
ADVANTAGE
Simple process
Fast deposition speed
Cheap process device
1. Partially different thickness
2. Difficult to control the element ratio
3. Hard to deposition the complex material layer
4. Low film quality
3.Material tobeevaporated by e-beam
- E-beam dashes against
is directly proportional tothe surface area ofthe conductor plates and inversely proportional tothe separation distance between the plates. If the charges on the plates are +Q and −Q, and V gives the voltage between the plates, then the capacitance is given by
C= Q/V
SI unit of capacitance isthe farad; 1 farad is 1 coulomb per volt. Capacitance can be calculated if the geometry ofthe
the growth of bacteria, fungi, and other micro-organisms, as well as regarding the oxidation of fats which cause rancidity. It also includes processes to inhibit natural aging and discoloration that can occur during food preparation such as the enzymatic browning reaction in apples or potatoes, etc. Some preservation methods require foods tobe sealed after treatment to prevent recontamination wi
the electrons
are directed by
electromagnetic field
resulting collision ontothe
source surface
After heated to certain
degree, source gas was
generated
The sensor monitors the
thickness of deposited film.
High vacuum should be kept in
the chamber not to contain
oxigen
gas which damages
substrate surface
After reaching sufficient
vacuum, argon gas is added
in
2.3 C-V graph
The measured MOS capacitance (called gate capacitance) varies with the applied gate voltage.
① Measurement of C-V characteristics
-Apply any DC bias, and superimpose a small (15 mV) ac signal
-Generally measured at 1 MHz (high frequency) or at variable frequencies between 1KHz to 1 MHz
-The dc bias VG is slowly varied to get quasi-continuous C-V characteristics
② C-V chara