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[반도체] Molecular Beam Epitaxy(MBE)

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레포트 > 공학계열
2010.04.26
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[반도체] Molecular Beam Epitaxy(MBE)에 대한 자료입니다.

Introduction
Equipment
Processes
sources
materials
parameters
interface
mechanism
Products
Example
Summary

본문내용

Solid Source
each cell is loaded with a charge material, usually a pure element like gallium or arsenic, which is solid at room temperature.
The gaseous atomic or molecular beam is generated by heating the charge in the effusion cell in the growth chamber.
The effective beam pressure or flow rate of the gas, called the beam flux, is varied by adjusting the effusion cell temperature.
A shutter is used to “shut off” the beam; in fact, with the shutter closed, the beam is deflected away from the substrate and pumped away through the growth chamber.

Gas Source
CBE (Chemical Beam Epitaxy)
MOMBE (Metal-organic MBE)
GS-MBE (Gas Source MBE)

the charge material - a molecular species that contains the desired element - is a gas at room temperature. (Liquids with an appreciable vapor pressure at or near room temperature may also be used.)
A standard gas handling system connects the external gas canister to the growth chamber.
Beam fluxes may be changed almost instantly by adjusting the gas flow valves. When the valve is closed, no charge material enters the chamber.
The source used to introduce the gas may be a "cracker" which is used to thermally decompose the gas, e.g. . Or it may be an "injector" which operates at a sufficiently high temperature to prevent condensation and maintain a stable flux

참고문헌

M.A. Herman, molecular beam epitaxy, 1996

2. Sze, Semiconductor device, 2002

3. Carl Wilmsen et al, vertical-cavity surface-emitting lasers, 1999

4. Sarah Kurtz et al, applied physics letters, vol. 78, no. 6, 2001

5. M.A. Pinault et al, applied physics letters, vol. 78, no. 11, 2001

6. Masahiko Kondow et al, IEEE J. selected topics in quantum electronics, vol. 3 no. 3 1997. S.M

#the #and #of #to #is #in #beam #be #MBE

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